AS5040
Data Sheet
CMOS / Program Input: Prog
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
High level input voltage
Symbol
V IH
Min
0.7 * VDD5V
Max
5
Unit
V
Note
High level input voltage
Low level input voltage
Pull-down high level input current
V PROG
V IL
I iL
See “programming conditions”
0.3 * VDD5V
100
V
V
μA
During programming
VDD5V: 5.5V
CMOS Output Open Drain: MagINCn, MagDECn
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Low level output voltage
Output current
Open drain leakage current
Symbol
V OL
I O
I OZ
Min
Max
VSS+0.4
4
2
1
Unit
V
mA
μA
Note
VDD5V: 4.5V
VDD5V: 3V
CMOS Output: A, B, Index, PWM
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
High level output voltage
Low level output voltage
V OH
V OL
VDD5V-0.5
VSS+0.4
V
V
Output current
I O
4
2
mA
VDD5V: 4.5V
VDD5V: 3V
Tristate CMOS Output: DO
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation)
unless otherwise noted)
Parameter
Symbol
Min
Max
Unit
Note
High level output voltage
Low level output voltage
V OH
V OL
VDD5V –0.5
VSS+0.4
V
V
Output current
Tri-state leakage current
I O
I OZ
4
2
1
mA
μA
VDD5V: 4.5V
VDD5V: 3V
Magnetic Input Specification
(operating conditions: T amb = -40 to +125°C, VDD5V = 3.0-3.6V (3V operation) VDD5V = 4.5-5.5V (5V operation) unless otherwise
noted)
Two-pole cylindrical diametrically magnetised source:
Parameter
Diameter
Thickness
Symbol
d mag
t mag
Min
4
2.5
Typ
6
Max
Unit
mm
mm
Note
Recommended magnet: ? 6mm x 2.5mm for
cylindrical magnets
Required vertical component of the
Magnetic input field
amplitude
B pk
45
75
mT
magnetic field strength on the die’s surface,
measured along a concentric circle with a
radius of 1.1mm
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Revision 2.10
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